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In the field of modern power electronics, MOSFET inverter have become the technology of choice in many application scenarios due to their excellent performance and reliability. This article will explore the basic concept of mosfet inverter, working principle, advantages and how to choose the right MOSFET inverter, in addition to the comparison of MOSFET and other power devices such as IGBT differences, to provide you with a comprehensive mosfet inverter technology guide.
What is a MOSFET
MOSFET is a Transistor that uses electric Field Effect to control on-off and on-off, the full name of which is Metal-Oxide-Semiconductor field-effect transistor (MOSFET), which is widely used in electronic circuits.
The basic structure of a MOSFET
It mainly includes four parts:
Source: The input end of the current, where electrons or holes in the device enter.
Gate: Control terminal, by changing the gate voltage can control the current between the source and drain.
Drain: The output end of the current. When the MOSFET is on, the current flows through the channel from the source and leaves the device through the drain
Body: Also known as substrate, is the physical support part of the transistor. The body is usually made of silicon material, connected to the source, and the potential difference between the body and other parts affects the characteristics of the device.
A MOSFET is a voltage-controlled device in mosfet inverter that works by applying a voltage to the Gate to control the current between the Source and Drain. When the gate voltage reaches a certain value, the MOSFET is switched on, and the current can flow between the source and drain. When the gate voltage is low, the MOSFET is in the off state and the current is blocked.
The role of MOSFET in inverters
The role of MOSFET in the inverter is very important, and the main function is to efficiently convert direct current (DC) into alternating current. MOSFET can be based on the input control signal, with its own fast switching characteristics, low on-resistance and relatively high voltage and current tolerance, in a very short time to switch the state, very suitable for efficient power conversion in the inverter.
With the development of technology, MOSFETs using silicon carbide (SiC) (silicon carbide inverter)have gained attention for their higher efficiency, smaller size and lighter weight, especially in electric vehicle traction inverters. Compared to traditional silicon-based MOSFETs, SiC MOSFETs can operate at higher temperatures and have lower on-resistance and faster switching speeds, helping to improve the overall efficiency and performance of the inverter.
Advantages of mosfet inverter
Fast switching speed: MOSFETs are able to switch quickly, which is important for applications that require high-frequency operation, which is much faster than traditional bipolar transistors (BJT) or insulated-gate bipolar transistors (IGBTs).
Fast switching can also reduce the loss of energy, when the switching device from the off state to the on state, it will go through a period during which the voltage at both ends of the device begins to build, and the current begins to flow. If this process is slow, then in the presence of both voltage and current, the device will consume significant power, resulting in energy loss.
High input impedance: The input impedance of MOSFETs is very high, usually between a few megohm and tens of megohm, which means that the gate absorbs almost no current, reducing the complexity and cost of the drive circuit, and also reducing power losses and improving overall efficiency.
Good thermal performance: The MOSFETs have fast switching speed and low on-resistance, which reduces heat generation and helps to improve the reliability and life of the inverter.
Smaller volume and weight: due to the high-frequency operation capability, smaller magnetic components (such as transformers and inductors) can be used, because at high frequencies, the loss of magnetic materials is smaller, and the same function can be achieved with smaller magnetic components, so the volume and weight of the inverter can be reduced to a certain extent.
How to choose the right MOSFET inverter
Power level: Select the right MOSFET inverter according to the power requirements of the system. Ensure that the inverter can handle the maximum current and voltage. If you use industrial motors or large solar power generation systems, you need to use inverters with higher power levels to ensure stable operation. If the power of the inverter is less than the power requirements of the supporting system, the device may be damaged or cause performance degradation.
Efficiency: Efficient MOSFET inverters reduce energy loss and produce less heat, helping to reduce inverter cooling requirements and improve overall system performance. Efficiency is an important index to measure the performance of inverter. Can ensure the efficient use of electrical energy.
Switching frequency: MOSFETs mean high-frequency switches, and when the switching frequency is increased, transformers and inductors can process current faster. As a result, they process more energy per second and need to store and transmit less energy each time. The high-frequency switch can reduce the size and weight of the magnetic components in the inverter, which is conducive to the miniaturization and lightweight of the inverter
Protection function: Select a MOSFET inverter with built-in protection functions such as overload protection, short circuit protection, and overheat protection.
You can check inverter buying guide for smart purchase.
MOSFET inverter vs. other power devices such as IGBT inverter
MOSFET and IGBT are voltage-controlled switching devices, which have the advantages of fast switching speed, easy driving and low loss. The full name of IGBT is an insulated gate type power tube, which is a composite full-controlled voltage-driven semiconductor power device composed of bipolar triode (BJT) and MOSFET, and has the advantages of high input impedance of MOSFET and low on-voltage drop of BJT.
You can check more information about inverter IGBT.
Both MOSFETs and IGBTs are solid-state semiconductor devices integrated on a single chip of silicon, and both are voltage control devices. In addition, both IGBTs and MOSFETs have insulation between the gate and other terminals, and both devices have high input impedance. In applications, both IGBTs and MOSFETs can be used as static electronic switches.
Structurally, MOSFETs and IGBTs look very similar, but they are different. An IGBT consists of an emitter, collector, and gate terminal, while a MOSFET consists of a source, drain, and gate terminal. The IGBT structure has PN junction, MOSFET does not have any PN junction.
In the low current region, the conduction of MOSFET is lower than that of IGBT, which is also its advantage. However, the forward voltage characteristic of IGBT is better than that of MOSFET in high current region. In addition, because the positive characteristics of MOSFET have a strong positive dependence on temperature, the high temperature characteristics of IGBT are better, and the on-voltage is lower than that of MOSFET.
Conclusion
The technology of MOSFET inverter continues to advance, providing efficient and reliable solutions for a variety of power equipment. Users can gain an in-depth understanding of the working principles and characteristics of MOSFET inverters through this article, and make better use of this technology to achieve efficient conversion and utilization of energy. With the continuous development of inverter technology in the future, MOSFET inverters are expected to play a more important role in the future.
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